Banca de QUALIFICAÇÃO: AGÊU ALVES DOS SANTOS

Uma banca de QUALIFICAÇÃO de DOUTORADO foi cadastrada pelo programa.
STUDENT : AGÊU ALVES DOS SANTOS
DATE: 13/03/2024
TIME: 10:00
LOCAL: Sala 406 do Bloco B do Campus de Santo André da Universidade Federal do ABC
TITLE:

A Novel Hysteresis Characterization Model for Gas-Dependent MoS₂ Field Effect Transistors

PAGES: 70
BIG AREA: Engenharias
AREA: Engenharia Elétrica
SUBÁREA: Circuitos Elétricos, Magnéticos e Eletrônicos
SPECIALTY: Circuitos Lineares e Não-Lineares
SUMMARY:

In this investigation, a new and completely original mathematical model was developed, which is capable of characterizing hysteresis in Molybdenum disulfide MoS₂ MOSFET (Metal-Oxide Semiconductor Field effect transistor) transistors, thus allowing to predict, the future behavior of the device.

Regarding hysteresis, it is a phenomenon present in several fields of science and engineering. The study of this phenomenon plays an important role in research and technological development, through understanding the phenomenology of certain devices. The downside is that hysteresis can reduce carriers mobility, significantly impairing transistor performance. On the positive side, hysteresis can be used conveniently in the construction, for instance, of memories. Also, through a bibliographical review, it was possible to verify that to date there is no model in the scientific literature that characterizes hysteresis in FET (Field effect transistor) Molybdenum disulfide  MoS₂ transistors. Thus, this new modeling is pioneer in the description of the hysteretic phenomenon in FET (Field effect transistor) MoS₂ transistors.

COMMITTEE MEMBERS:
Presidente - Interno ao Programa - 1205456 - LUIZ ALBERTO LUZ DE ALMEIDA
Membro Titular - Examinador(a) Interno ao Programa - 1762419 - CARLOS EDUARDO CAPOVILLA
Membro Titular - Examinador(a) Externo à Instituição - JOÃO ANTONIO MARTINO - USP
Membro Suplente - Examinador(a) Interno ao Programa - 1761107 - RICARDO SUYAMA