Banca de DEFESA: GABRIEL HENRIQUE INÁCIO DE OLIVEIRA

Uma banca de DEFESA de MESTRADO foi cadastrada pelo programa.
STUDENT : GABRIEL HENRIQUE INÁCIO DE OLIVEIRA
DATE: 26/09/2023
TIME: 13:30
LOCAL: presencial
TITLE:

OBTAINING TRANSPARENT CONDUCTIVE FILMS OF ZINC OXIDE DOPED WITH ALUMINUM (AZO) FOR ELECTRICAL CONTACT IN SOLAR CELLS

PAGES: 104
BIG AREA: Engenharias
AREA: Engenharia Elétrica
SUBÁREA: Materiais Elétricos
SPECIALTY: Materiais e Componentes Semicondutores
SUMMARY:

The study presented in this work objective to obtain transparent films of zinc oxide doped with aluminum (AZO) for application of a transparent conductive film (TCO) using a low cost doping method for electrical contacts of a cell solar. The technique for obtaining thin films used in this work was r.f. Magnetron Sputtering. For this, a zinc target was used and aluminum doping was performed using aluminum wires of different lengths on the zinc target, allowing to control the composition of the deposited film. The AZO film was obtained from the oxidation of Al-doped zinc films at different temperatures and times. In this work structural and morphological properties were related to electrical resistivity and transmittance of transparent films of Al-doped ZnO (AZO). Furthermore, the influence of deposition parameters such as r.f. power, and distance from target to sample holder on the quality of thin film was studied. The deposited AZO films were characterized by the following techniques: profilometry, scanning electron microscopy (SEM) and using electron scattering spectroscopy (EDS), UV-Vis spectroscopy, X-ray diffraction (XRD), photoelectron spectroscopy X-Rays (XPS) and the four-point technique. Preliminary results demonstrated a correlation of deposition parameters such as r.f. power and the distance from the target to the sample holder, showing the best deposition results for a power of 300W with a distance of 10 cm. The r.f. power used in the sputtering depositions influenced the crystallinity of the AZO samples, without affecting the chemical bonds. It was observed that the Al concentration varied according to the length of the Al wire used in the deposition, showing the doping efficiency with this technique. It was also observed that the optical gap increased with increasing Al concentration. The crystallite size and the concentration of defects in ZnO-type bonds had a strong influence on the resistivity value. The resistivity value decreased two orders of magnitude with doping and the lowest resistivity values were reached for an Al concentration around 1%. All samples showed transmittance above 80%, compatible with TCO applications.

COMMITTEE MEMBERS:
Presidente - Interno ao Programa - 1768304 - DENISE CRIADO PEREIRA DE SOUZA
Membro Titular - Examinador(a) Interno ao Programa - 1545447 - MARCOS ROBERTO DA ROCHA GESUALDI
Membro Titular - Examinador(a) Externo ao Programa - 1838179 - KATIA FRANKLIN ALBERTIN TORRES
Membro Suplente - Examinador(a) Interno ao Programa - 1762419 - CARLOS EDUARDO CAPOVILLA
Membro Suplente - Examinador(a) Externo ao Programa - 1671297 - MICHEL OLIVEIRA DA SILVA DANTAS